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| Silicon Dual Schottky Diode BAT 15-04 q q q DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code (tape and reel) Q62702-A504 Pin Configuration Marking 1 2 3 A - C S8 Package BAT 15-04 SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS 55 C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 110 100 - 55 ... + 150 - 55 ... + 150 Unit V mA mW C C VR IF Ptot Top Tstg Rth JA Rth JS 1090 930 K/W K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94 BAT 15-04 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching Value typ. max. Unit V(BR) 4 - 0.23 0.32 - - 5.5 - V V - - - 4 mV - 20 pF - 0.35 - - VF VF CT RF IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Package Outline SOT-23 Semiconductor Group 2 BAT 15-04 Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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